K9F8008W0M-TIB0 datasheet, memory equivalent, Samsung semiconductor

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Features and benefits

* Voltage supply : 2.7V ~ 5.5V
* Organization - Memory Cell Array : (1M + 32K)bit x 8bit - Data Register : (256 + 8)bit x8bit
* Automatic Program and Erase(Ty.

Application

and also the spare 8bytes of a page combined with the other 256 bytes can be utilized by system-level ECC. The K9F8008W0.

Description

The K9F8008W0M is a 1M(1,048,576)x8bit NAND Flash Memory with a spare 32K(32,768)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 264-byte page in typically 250 µ.

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